BEIJING, Aug. 31 /PRNewswire-Asia-AsiaNet/ –
TankeBlue Semiconductor Co. Ltd., a pioneer in the SiC industry of the
Asia-pacific region, has recently scaled-up production of high quality 3″ SiC
wafers. Early this year, TankeBlue lowered its 2″ wafers’ price to a record
level in response to the increasing market demands of SiC customers worldwide.
Currently, it can supply, in lager scale, conductive n-type 3″ 4H-SiC wafers
with a micro-pipe density below 10 cm-2, a key quality parameter for
applications. The other key quality parameters, such as the resistivity (less
than 0.03 ohm.cm), the full width at the half maximum (FWHM: 30 arcsec) of
X-ray rocking curve, of the 3″ 4H-SiC wafer also make the wafer quality very
competitive compared to other suppliers from the United States and Europe. In
addition, the wafer processing quality of the SiC wafers is proven to be
epi-ready, excellent for growth of GaN and/or SiC epi-layers on the SiC wafer.
The SiC devices, such as the Schottky barrier diode, metal semiconductor /
oxide field effect transistor, processed on the wafer by customers, have
demonstrated high performance comparable with those on SiC wafers from other
suppliers. It is clear that this makes TankeBlue a new supply source of 3″ SiC
wafers and, surely, it is a welcome move for the worldwide SiC semiconductor
As is well known, the silicon-based semiconductor devices are difficult to
operate at temperatures above 523 K. This limits the functions and
applications of silicon-based devices. Due to its excellent thermal and
electrical properties, the n-type SiC wafer is an ideal substrate for
fabricating SiC power devices in high-temperature, high-power,
high-frequency and high-radiation applications and for energy saving
requirements. The company’s efforts on development of 4″ SiC crystal growth in
order to become one of the major players on wafer market are already on the
For more information, please contact:
TankeBlue Semiconductors Co. Ltd.
SOURCE: TankeBlue Semiconductor Co. Ltd.